ZnO doping profile effect on CIGS solar cells efficiency and parasitic resistive losses based on cells equivalent circuit

Author

Khoshsirat, Nima ; Md Yunus, Nurul Amziah ; Hamidon, Mohd Nizar ; Shafie, Suhaidi ; Amin, N.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. Putra Malaysia (UPM), Serdang, Malaysia

fYear

2013

fDate

18-19 Sept. 2013

Firstpage

86

Lastpage

91

Abstract

The window layer of the CIGS thin film solar cells plays the role of transparent front contact and the n-side of pn-heterojunction. Thus the variation of window layers electrical and optical properties can affect the cell performance. Properties of Al-doped Zinc oxide (ZnO) thin film as most common used window layer for CIGS solar cells were studied via simulation using the simulation program called SCAPS-1D. This study is aimed to find the effect of ZnO layer doping profile on cell performance. It is found that increasing Al-content up to 5% in ZnO layer will lead to increasing the cell efficiency and will decrease the cell series and shunt resistance.

Keywords

II-VI semiconductors; aluminium; copper compounds; doping profiles; equivalent circuits; gallium compounds; indium compounds; p-n heterojunctions; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; CIGS solar cells efficiency; Cu(InGa)Se₂; SCAPS-1D simulation program; ZnO:Al; cell efficiency; cell performance; cells equivalent circuit; doping profile; parasitic resistive losses; pn-heterojunction; thin film solar cells; transparent front contact; window layers; CIGS; SCAPS-1D; Thin film solar cells; Window layer; Zinc Oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ICCAS), 2013 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/CircuitsAndSystems.2013.6671641

Filename

6671641