• DocumentCode
    64777
  • Title

    The Role of Feedback Resistors and TID Effects in the ASET Response of a High Speed Current Feedback Amplifier

  • Author

    Roig, Fabien ; Dusseau, L. ; Ribeiro, P. ; Auriel, G. ; Roche, Nicholas J.-H ; Privat, A. ; Vaille, J.-R. ; Boch, J. ; Saigne, F. ; Marec, R. ; Calvel, P. ; Bezerra, F. ; Ecoffet, R. ; Azais, Bruno

  • Author_Institution
    Commissariat a l´Energie Atomique et aux Energies Alternatives, CEA (Gramat), Gramat, France
  • Volume
    61
  • Issue
    6
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    3201
  • Lastpage
    3209
  • Abstract
    The influence of external circuit designs on ASET shapes in a high speed current feedback amplifier (CFA) (AD844) is investigated by means of the pulsed laser single event effect (PLSEE) simulation technique. Changes of the feedback resistors modify circuit´s electrical parameters such as closed-loop gain and bandwidth, affecting amplifier stability and so ASET shapes. Qualitative explanations based on general electronic rules and feedback theories enable the understanding of a CFA operation establishing a correlation between the evolution of external feedback resistor values and ASET parameters. TID effects on the ASET sensitivity in AD844 CFA are also investigated in this work highlighting different behaviors according to the impacted bipolar transistor in the integrated circuit.
  • Keywords
    circuit stability; feedback amplifiers; radiation hardening (electronics); resistors; AD844 CFA; ASET response; ASET sensitivity; ASET shapes; PLSEE; TID effects; amplifier stability; analog single event transients; bipolar transistor; circuit electrical parameters; closed-loop gain; external circuit designs; feedback resistors; feedback theory; general electronic rules; high speed current feedback amplifier; pulsed laser single event effect simulation technique; total ionizing dose; Bipolar integrated circuits; Feedback amplifiers; Ionizing radiation; Resistors; Single event transients; Transient analysis; Transient response; Bipolar analog integrated circuits; ionizing dose; single event transient; transient analysis; transient response;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2369347
  • Filename
    6969838