Title :
Schematic design of HF and UHF op-amp for SiGe technology
Author :
Krutchinsky, Sergei G. ; Zhebrun, Evgeniy A. ; Svizev, Victor A.
Author_Institution :
Sci. Center MicAn, Southern Fed. Univ., Rostov-on-Don, Russia
Abstract :
On the basis of functional-topological principles of self-compensation and cancellation of field-effect and bipolar transistors small-signal parameters influence a set of MOS dynamic loads and single-stage op-amp circuits have been proposed. A distinctive feature of the circuits is the equality of p-MOS and n-p-n heterojunction transistors contributions. Results of op-amp modeling on technical process TSMC 0.18 um basis have been presented. The advantages of proposed solutions have been shown.
Keywords :
Ge-Si alloys; III-V semiconductors; MOSFET; UHF amplifiers; UHF field effect transistors; bipolar transistors; operational amplifiers; semiconductor device models; MOS dynamic loads; SiGe; TSMC process; UHF op-amp schematic design; bipolar transistor small-signal parameter cancellation; bipolar transistor small-signal parameter self-compensation; field-effect transistor small-signal parameter self-cancellation; field-effect transistor small-signal parameter self-compensation; functional-topological principles; n-p-n heterojunction transistors; op-amp modeling; p-MOS heterojunction transistors; single-stage op-amp circuits; size 0.18 mum;
Conference_Titel :
Design & Test Symposium, 2013 East-West
Conference_Location :
Rostov-on-Don
Print_ISBN :
978-1-4799-2095-2
DOI :
10.1109/EWDTS.2013.6673105
