DocumentCode
648619
Title
A low power 1.2 GS/s 4-bit flash ADC in 0.18 µm CMOS
Author
Chahardori, Mohammad ; Sharifkhani, Mohammad ; Sadughi, Sirous
Author_Institution
Sharif Univ. of Technol., Tehran, Iran
fYear
2013
fDate
27-30 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
A low power 4-bit flash ADC is proposed. A new power reduction technique is employed which deactivates the unused blocks in the converter structure in order to reduce the power consumption. A new method for built-in threshold voltage generation together with a new offset calibration method is used to further reduce the power consumption in the converter. Monte-Carlo simulation shows that after calibration both the INL and the DNL are lower than 0.35 LSB. The converter achieves 3.5 effective number of bits (ENOB) at 1.2 GS/s sampling rate after the offset calibration is performed. It consumes 10 mW from a 1.8 V supply, yielding a FoM of 560 fJ/conversion.step in a 0.18 μm standard CMOS process.
Keywords
CMOS digital integrated circuits; Monte Carlo methods; analogue-digital conversion; convertors; ADC; CMOS technology; DNL; ENOB; FoM; INL; Monte-Carlo simulation; bit rate 1.2 Gbit/s; built-in threshold voltage generation; converter structure; effective number of bits; offset calibration method; power 10 mW; power consumption; power reduction technique; sampling rate; size 0.18 mum; voltage 1.8 V; word length 4 bit;
fLanguage
English
Publisher
ieee
Conference_Titel
Design & Test Symposium, 2013 East-West
Conference_Location
Rostov-on-Don
Print_ISBN
978-1-4799-2095-2
Type
conf
DOI
10.1109/EWDTS.2013.6673204
Filename
6673204
Link To Document