DocumentCode :
648643
Title :
Embedded tutorials: Embedded tutorial 1: Cell-aware test-from gates to transistors
Author :
Rajski, Janusz ; Potkonjak, Miodrag ; Singh, Adit ; Chatterjee, Abhijit ; Navabi, Zain ; Guthaus, Matthew ; Goren, Sezer
Author_Institution :
Mentor Graphics, USA
fYear :
2013
fDate :
7-9 Oct. 2013
Abstract :
Devices manufactured in 20 nm and smaller geometry technologies will potentially be very large by today´s standards, they will also have new characteristics implied by things like process variability and adoption of FinFET transistors. The industry has cumulatively adopted more and more sophisticated fault models that use timing as well as layout information. There is a growing body of experimental data showing it is still insufficient. The next area of focus will be the quality of test. Cell-aware test is one of the most promising approaches developed over the last five years aimed at improving the quality of test while maintaining the efficiency of gate-level approach. This approach combines two levels of abstraction to provide trade-offs between accuracy and efficiency. The first step creates the cell-aware test library models. It starts with standard cell libraries and performs layout extraction. Realistic defects (bridges and opens) are injected into the SPICE netlist, and analog fault simulation is performed to determine the conditions under which the defects are detected. Those conditions are aggregated to create a compact and efficient representation of the libraries for ATPG done at the gate-level. Generation of library views for cell-aware test is performed only once for a given standard cell library. The final cell-aware ATPG generates the high quality test patterns based on the cell-aware library views. This guarantees that the investment in gate-level ATPG infrastructure could be efficiently utilized. The technology has been used on a number of high-volume industrial designs. The experimental data show a significant increase of defect coverage and the corresponding improvement of defect rate.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Very Large Scale Integration (VLSI-SoC), 2013 IFIP/IEEE 21st International Conference on
Conference_Location :
Istanbul, Turkey
Type :
conf
DOI :
10.1109/VLSI-SoC.2013.6673230
Filename :
6673230
Link To Document :
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