A 5.3µA quiescent current fully-integrated low-dropout (LDO) regulator with Transient Recovery Time Enhancement

Author

Furth, Paul M. ; Krishnapurapu, Srikar ; Pakala, Sri Harsh ; Haque, Mohammad Ariful

Author_Institution

Klipsch Sch. of Electr. & Comput. Eng., New Mexico State Univ., Las Cruces, NM, USA

fYear

2013

fDate

4-7 Aug. 2013

Firstpage

9

Lastpage

12

Abstract

A new technique to decrease the transient recovery time in a very low-quiescent current low-dropout (LDO) voltage regulator is introduced. The new Transient Recovery Time Enhancement (TRTE) block comprises a voltage-to-current converter, current comparator and an NMOS output transistor. The proposed LDO using the TRTE block was fabricated in a 0.5-μm 2P3M CMOS process. The circuit operates at a total quiescent current of 5.3 μA with a maximum load current of 50 mA while supplying a regulated output voltage of 1.5 V to a 100 pF load. Experimental results indicate a drop-out voltage of 123 mV with an average recovery time of 5.22 μs under maximum load current changes.

Keywords

CMOS integrated circuits; MOSFET; comparators (circuits); voltage regulators; 2P3M CMOS process; LDO regulator; NMOS output transistor; TRTE block; capacitance 100 pF; current 5.3 muA; current 50 mA; current comparator; low-quiescent current low-dropout voltage regulator; quiescent current fully-integrated low-dropout regulator; size 0.5 mum; time 5.22 mus; transient recovery time enhancement block; voltage 1.5 V; voltage 123 mV; voltage-to-current converter; low power; low-dropout (LDO) regulator; slew-rate enhancement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on

Conference_Location

Columbus, OH

ISSN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2013.6674572

Filename

6674572