Title :
A Short-Channel TFT of Amorphous In–Ga–Zn–O Semiconductor Pixel Structure With Advanced Five-Mask Process
Author :
Joon-Young Yang ; Sung-Hoon Jung ; Chang-Seung Woo ; Ju-Hyun Lee ; Jung-Ho Park ; Myung-Chul Jun ; In-Byeong Kang ; Sang-Deog Yeo
Author_Institution :
R&D Center, LG Display, Paju, South Korea
Abstract :
We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under 5 μm) thin-film transistor (TFT) was successfully fabricated using a selfaligned damage preventing layer. The linear field effect mobility of the 4-μm channel length TFT was 10.4 cm2/V · s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.
Keywords :
etching; field effect transistors; gallium compounds; indium compounds; liquid crystal displays; masks; thin film transistors; AH-IPS display device; InGaZnO; five-mask etch-stopper amorphous semiconductor pixel structure; high-resolution advanced-high-performance in-plane-switching display device; linear field effect mobility; quadextended graphics array liquid-crystal display panel; self-aligned damage preventing layer; short-channel TFT; size 4 mum; thin-film transistor; Fabrication; Insulators; Logic gates; Mass production; Substrates; Thin film transistors; (a) -IGZO; AMOLED; LCD; a-IGZO; etch-stopper; oxide semiconductor; short channel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2349902
