DocumentCode :
649233
Title :
Modeling of transient faults and fault-tolerant design in nanoelectronics
Author :
Tian Ban ; Jianxin Wang ; Ting An ; Naviner, L.
Author_Institution :
Sch. of Electron. & Opt. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
fYear :
2013
fDate :
4-7 Aug. 2013
Firstpage :
545
Lastpage :
548
Abstract :
Transistors in nanometric technologies are increasingly susceptible to faults due to physical limitations. Since the constituent gates of a logic circuit actually have different failure rates, the assumption of constant gate failure rate in existing reliability evaluation and fault tolerant design is not desirable. This paper analyzes transient faults in CMOS logic gates at transistor level and proposes a mathematical model. Examples based on the benchmark circuit are provided to demonstrate the efficiency of the proposed model in both reliability evaluation and fault tolerant design.
Keywords :
CMOS logic circuits; MOSFET; failure analysis; fault diagnosis; fault tolerance; integrated circuit reliability; logic design; logic gates; nanoelectronics; CMOS logic gates; constant gate failure rate; fault-tolerant design; logic circuit; mathematical model; nanoelectronics; nanometric technology; reliability evaluation; transient fault modelling; transistor level;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location :
Columbus, OH
ISSN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2013.6674706
Filename :
6674706
Link To Document :
بازگشت