DocumentCode :
649434
Title :
Rank determination algorithm by current comparing for rank modulation flash memories
Author :
Mina Kim ; Shaterian, Mostafa ; Twigg, Christopher M.
Author_Institution :
Electr. & Comput. Eng. Dept., Binghamton Univ., Binghamton, NY, USA
fYear :
2013
fDate :
4-7 Aug. 2013
Firstpage :
1354
Lastpage :
1357
Abstract :
Rank modulation is a new data representation method for flash memories that uses the relative orders of memory cell levels. With this innovative approach, flash memory reliability and storage capacity are improved at the same time. Previous rank modulation hardware used winner-take-all circuits for rank determination. In this paper a new rank determination strategy using current-mode comparison is proposed. Instead of a complex array of winner-take-all circuits, this scheme utilizes one row of current-mode comparators for the rank determination. The proposed flash memory circuits are less complicated, more area efficient, and require less power than the winner-take-all array approach.
Keywords :
data structures; flash memories; integrated circuit reliability; current-mode comparison; data representation method; flash memory reliability; memory cell levels; rank determination algorithm; rank modulation hardware; relative orders; storage capacity; winner-take-all array approach;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on
Conference_Location :
Columbus, OH
ISSN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2013.6674907
Filename :
6674907
Link To Document :
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