DocumentCode
649496
Title
Double-sided cooling and thermo-electrical management of power transients for silicon chips on DCB-substrates for converter applications: Design, technology and test
Author
Wunderle, B. ; Manier, C.-A. ; Ras, M. Abo ; Springborn, M. ; May, Dominik ; Oppermann, H. ; Toepper, Michael ; Mrossko, R. ; Xhonneux, T. ; Caroff, T. ; Maurer, W. ; Mitova, R.
Author_Institution
Chemnitz Univ. of Technol., Chemnitz, Germany
fYear
2013
fDate
25-27 Sept. 2013
Firstpage
253
Lastpage
261
Abstract
This paper deals with the system design, technology and test of a novel concept of integrating Si and SiC power dies along with thermo-electric coolers in order to thermally manage transients occurring during operation. The concept features double-sided cooling as well as new materials and joining technologies to integrate the dies such as transient liquid phase bonding/soldering and sintering. Coupled-field simulations are used to predict thermal performance and are verified by especially designed test stands to very good agreement. This paper is the second in a series of publications on the ongoing work.
Keywords
elemental semiconductors; power convertors; power integrated circuits; silicon; silicon compounds; thermoelectric cooling; transient analysis; wide band gap semiconductors; DCB-substrates; Si; SiC; converter applications; coupled-field simulations; double-sided cooling; joining technology; power dies; power transients; silicon chips; sintering; soldering; system design; thermal performance prediction; thermo-electric coolers; thermo-electrical management; transient liquid phase bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal Investigations of ICs and Systems (THERMINIC), 2013 19th International Workshop on
Conference_Location
Berlin
Print_ISBN
978-1-4799-2271-0
Type
conf
DOI
10.1109/THERMINIC.2013.6675189
Filename
6675189
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