DocumentCode :
649510
Title :
Impact of nonlinearities in boundary conditions on device compact thermal models
Author :
Janicki, Marcin ; Torzewicz, T. ; Vass-Varnai, Andras ; Napieralski, A.
Author_Institution :
Dept. of Microelectron. & Comput. Sci., Lodz Univ. of Technol., Lodz, Poland
fYear :
2013
fDate :
25-27 Sept. 2013
Firstpage :
202
Lastpage :
205
Abstract :
This paper investigates the influence of nonlinearities in boundary conditions on thermal transients as well as their impact on the values of electronic system compact thermal model elements. The discussions in the paper are based on practical examples where thermal responses of a power device are recorded in various boundary conditions for different values of dissipated power. Then, the measurement results are analyzed using the Network Identification by Deconvolution method and the differences between particular cases are discussed in detail. The presented experimental results clearly show that the nonlinearities due to the temperature dependence of boundary conditions do have important influence on all the values of compact thermal model elements. This might suggest that in some practical cases nonlinear system identification methods should be used.
Keywords :
deconvolution; power semiconductor diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; boundary conditions; device compact thermal model; dissipated power values; electronic system compact thermal model element; network identification-deconvolution method; nonlinear system identification method; power device; silicon carbide power diode; thermal responses; thermal transients;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal Investigations of ICs and Systems (THERMINIC), 2013 19th International Workshop on
Conference_Location :
Berlin
Print_ISBN :
978-1-4799-2271-0
Type :
conf
DOI :
10.1109/THERMINIC.2013.6675203
Filename :
6675203
Link To Document :
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