Title :
Synthesis and characterization of In2O3 micro- and nano-structures at low temperatures by the CSVT technique
Author :
Cortes-Salinas, D. ; Chavez, Fernando ; Perez-Sanchez, G.F. ; Zaca-Moran, P. ; Morales-Acevedo, Arturo ; Pena-Sierra, R. ; Goiz, O. ; Huerta, A.T.
Author_Institution :
Fac. of Chem. Eng., BUAP, Puebla, Mexico
fDate :
Sept. 30 2013-Oct. 4 2013
Abstract :
Indium oxide microstructures were synthesized by close-spaced chemical vapor transport (CSVT) technique at low temperatures and without the use of catalysts. Morphological characterization by scanning electron microscopy (SEM) showed that the CSVT technique provides high mass-transport efficiency at temperatures as low as 650°C, considering that indium oxide powders were used as a source for the synthesis. It is observed that the microstructures are formed mainly of cubes with semi-spheroids attached to their faces. Additional measurements of X-ray (XRD), Raman, and Energy-dispersive X-ray spectroscopy (EDS) showed that the cubes tend to have the stoichiometry of cubic indium oxide while the semi-spheroids have a metallic nature. The microstructures were converted to indium oxide nanobelts by a simple post thermal annealing during 16 hours in a nitrogen environment, according to the morphological and structural characterizations. The results revealed that the indium oxide nanobelts have several micrometers in length with rectangular cross sections in the range from 50 to 250 nanometers and correspond to indium oxide in the cubic and face-centered phases. The growth mechanisms of the micostructures and nanobelts are discussed in detail.
Keywords :
X-ray chemical analysis; X-ray diffraction; annealing; indium compounds; mass transfer; nanobelts; nanofabrication; scanning electron microscopy; semiconductor growth; stoichiometry; wide band gap semiconductors; EDS; In2O3; Raman measurement; SEM; X-ray measurement; XRD; close-spaced chemical vapor transport technique; cubic indium oxide stoichiometry; cubic phase; energy-dispersive X-ray spectroscopy; face-centered phase; indium oxide microstructures; indium oxide nanobelts; indium oxide powders; mass-transport efficiency; metallic nature; micostructure growth mechanism; morphological characterization; nanobelt growth mechanism; nanostructure; nitrogen environment; post thermal annealing; rectangular cross sections; scanning electron microscopy; semispheroids; size 50 nm to 250 nm; structural characterization; temperature 650 degC; CSVT; Indium oxide; Microstructures; Nanostructures; Thermal Annealing;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control (CCE), 2013 10th International Conference on
Conference_Location :
Mexico City
Print_ISBN :
978-1-4799-1460-9
DOI :
10.1109/ICEEE.2013.6676013