Floating gate MOSFET programming circuit for standard CMOS technology

In this work, we describe the low-complexity analog pulsed circuits for programming the electrical charge of floating gate p-channel transistors. These circuits control the injection current into the floating gate. The principle supporting the expected good resolution in this system comes from observing two operating cycles. In the first cycle, a constant injection current is applied then, in the second cycle, the resulting drain current is compared with a target current keeping the floating gate transistor inside the working analog circuit, where it belongs to. Both cycles, which are periodic and interleaved are valid until the target current is reached, event detected by a current comparator. This strategy seems to have no appreciable programming error. For the simulation results, it is introduced an injection current model supporting the technology used in this programming circuit namely, 0.5-micron, n-well, CMOS, whose electrical parameters were contained in the Mentor IC Nanometer Suite.