The application of electrodeposition in thin film transistors for flexible organic electronics

This research has presented the method utilized to deposit and integrate solutions and processed materials, fabricating thin film transistors through the Electrodeposition System. We have demonstrated a successful integration for the process of fabricating an organic transistor flexible prototype as well as discussed the factors that have enabled this process. In the process, the maximum temperature was 160°C, corresponding to the baking of the polymeric gate dielectric. In addition, these devices presented good electrical performances with field-effect mobility of 0.04 cm² V^-1 s^-1 and low threshold voltages around -10 V. Scanning Electron Microscopy (SEM) studies have revealed that the surface of polyaniline additive layers is strongly conditioned by the surface morphology of the dielectric.