• DocumentCode
    650103
  • Title

    RTP silicon oxynitrides to fabricate MOS tunnel diodes

  • Author

    Christiano, V. ; dos Santos Filho, S.G.

  • Author_Institution
    Univ. of Sao Paulo: LSI/PSI/EPUSP, Sao Paulo, Brazil
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Oxide layers with thickness varying from 1 to 2.4 nm, were obtained at 700 and 850°C, in a mixed ambient of nitrogen and oxygen. Thicker layers were also grown at 1150°C in the mixed ambient, or just in oxygen, using a conventional thermal furnace adapted for a rapid thermal processing (RTP).
  • Keywords
    MIS devices; oxidation; rapid thermal processing; silicon compounds; tunnel diodes; MOS tunnel diodes fabrication; RTP; oxide layers; rapid thermal processing; silicon oxynitrides; temperature 1150 C; temperature 700 C; temperature 850 C; thermal furnace; Oxynitrides; RTP; SiON; Temperature profiling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
  • Conference_Location
    Curitiba
  • Print_ISBN
    978-1-4799-0516-4
  • Type

    conf

  • DOI
    10.1109/SBMicro.2013.6676135
  • Filename
    6676135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=650103