Title :
RTP silicon oxynitrides to fabricate MOS tunnel diodes
Author :
Christiano, V. ; dos Santos Filho, S.G.
Author_Institution :
Univ. of Sao Paulo: LSI/PSI/EPUSP, Sao Paulo, Brazil
Abstract :
Oxide layers with thickness varying from 1 to 2.4 nm, were obtained at 700 and 850°C, in a mixed ambient of nitrogen and oxygen. Thicker layers were also grown at 1150°C in the mixed ambient, or just in oxygen, using a conventional thermal furnace adapted for a rapid thermal processing (RTP).
Keywords :
MIS devices; oxidation; rapid thermal processing; silicon compounds; tunnel diodes; MOS tunnel diodes fabrication; RTP; oxide layers; rapid thermal processing; silicon oxynitrides; temperature 1150 C; temperature 700 C; temperature 850 C; thermal furnace; Oxynitrides; RTP; SiON; Temperature profiling;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676135
