• DocumentCode
    650120
  • Title

    Two-sided read window observed on UTBOX SOI 1T-DRAM

  • Author

    Nissimoff, Albert ; Sasaki, K.R.A. ; Aoulaiche, Marc ; Martino, Joao Antonio ; Simoen, Eddy ; Claeys, Cor

  • Author_Institution
    LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper analyzes the read windows of decananometer UTBOX SOI 1T-DRAM memory devices focusing on the mechanisms involved as a function of the applied gate voltage during the read operation. It will be demonstrated both experimentally and by simulation that a novel two-sided read window is possible where the two main effects present, GIDL and parasitic BJT, can be effectively accounted for in two different zones.
  • Keywords
    DRAM chips; bipolar transistors; leakage currents; silicon-on-insulator; GIDL; decananometer UTBOX SOI 1T-DRAM memory devices; gate induced drain leakage; gate voltage; parasitic BJT; read operation; two-sided read window; 1T-FBRAM; UTBOX SOI; read window; sense margin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
  • Conference_Location
    Curitiba
  • Print_ISBN
    978-1-4799-0516-4
  • Type

    conf

  • DOI
    10.1109/SBMicro.2013.6676152
  • Filename
    6676152
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=650120