• DocumentCode
    650133
  • Title

    Analytical model for potential in double-gate juntionless transistors

  • Author

    Cerdeira, Antonio ; Estrada, M. ; Trevisoli, R.D. ; Doria, R.T. ; de Souza, M. ; Pavanello, Marcelo Antonio

  • Author_Institution
    Depto. Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    An analytical model to calculate the potential at the surface and at the center of silicon layer for long-channel Junctionless transistors is derived and explained the basic details. The analytical model is compared with the numerical solution of the fundamental equations showing the validity of the assumptions considered.
  • Keywords
    MOSFET; numerical analysis; double-gate juntionless transistors; long-channel Junctionless transistors; numerical solution; Junctionless transistors; analytical calculation of potentials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
  • Conference_Location
    Curitiba
  • Print_ISBN
    978-1-4799-0516-4
  • Type

    conf

  • DOI
    10.1109/SBMicro.2013.6676165
  • Filename
    6676165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=650133