Author :
Neto, Enrico D. ; Simoen, Eddy ; Claeys, Cor ; Gimenez, Salvador Pinillos
Author_Institution :
Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This paper is conceptual and introduces for the first time a new concept of structural design for FinFETs, the OCTO FinFET, which consists of an evolution of the Diamond layout style. Three-dimensional numerical simulations were performed in order to compare the performance between this new architecture and the conventional counterpart. It is shown that this layout style can significantly improve important parameters such as drain current, transconductance and on-state resistance.
Keywords :
MOSFET; numerical analysis; semiconductor device models; OCTO FinFET; diamond layout style; drain current; on-state resistance; structural design; three-dimensional numerical simulations; transconductance; FinFET; OCTO; TCAD simulation; modelling and simulation;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676167
