DocumentCode
650138
Title
The influence of the substrate bias in Junctionless nanowire transistors
Author
Trevisoli, R.D. ; Doria, R.T. ; de Souza, M. ; Pavanello, Marcelo Antonio
Author_Institution
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
This work aims at analyzing the influence of the substrate bias in the operation of Junctionless Nanowire Transistors. The analysis is based on simulated and experimental data. The discussion about the substrate influence on the devices operation is also accomplished by modeled results. The threshold voltage and the maximum transconductance dependence on the substrate bias are the key parameters under analysis.
Keywords
electrical conductivity; nanowires; transistors; experimental data; junctionless nanowire transistors; substrate bias; threshold voltage; transconductance dependence; Junctionless Transistors; Maximum Transconductance; Substrate Bias; Threshold Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location
Curitiba
Print_ISBN
978-1-4799-0516-4
Type
conf
DOI
10.1109/SBMicro.2013.6676170
Filename
6676170
Link To Document