Title :
The influence of the substrate bias in Junctionless nanowire transistors
Author :
Trevisoli, R.D. ; Doria, R.T. ; de Souza, M. ; Pavanello, Marcelo Antonio
Author_Institution :
Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
This work aims at analyzing the influence of the substrate bias in the operation of Junctionless Nanowire Transistors. The analysis is based on simulated and experimental data. The discussion about the substrate influence on the devices operation is also accomplished by modeled results. The threshold voltage and the maximum transconductance dependence on the substrate bias are the key parameters under analysis.
Keywords :
electrical conductivity; nanowires; transistors; experimental data; junctionless nanowire transistors; substrate bias; threshold voltage; transconductance dependence; Junctionless Transistors; Maximum Transconductance; Substrate Bias; Threshold Voltage;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
DOI :
10.1109/SBMicro.2013.6676170
