DocumentCode :
650140
Title :
CMOS transfer-gated active pixel with a resistive transducer element
Author :
do Rosario, Pedro V. F. ; Goulart, Mariana V. ; Guimaraes, Bruno H. S. ; Salles, Luciana P. ; de Lima Monteiro, Davies W.
Author_Institution :
Dept. of Electr. Eng., Univ. Fed. de Minas Gerais, Belo Horizonte, Brazil
fYear :
2013
fDate :
2-6 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents experimental results and analyses of a resistive transducer, a photoresistor, with an Active-Pixel Sensor (APS) circuit, widely used in image sensors. The pixel circuit is equipped with a transfer-gate switch to keep the signal constant in the read node. This particular circuit-sensor configuration has not been found in the literature, and can be designed for applications with a variety of detectors with variable resistives characteristics, beyond the scope of photosensitivity.
Keywords :
CMOS integrated circuits; photoresistors; transducers; CMOS transfer-gated active pixel; active-pixel sensor; circuit-sensor configuration; photoresistor; photosensitivity; resistive transducer element; signal constant; transfer-gate switch; Active Pixel Sensor; CMOS analog integrated circuits; LDR; integrated optoelectronics; light sensors; photoresistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location :
Curitiba
Print_ISBN :
978-1-4799-0516-4
Type :
conf
DOI :
10.1109/SBMicro.2013.6676172
Filename :
6676172
Link To Document :
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