DocumentCode
650145
Title
Analysis of charges densities in multiple-gates SOI nMOS junctionless
Author
Mariniello, G. ; Cerdeira, Antonio ; Estrada, M. ; Doria, R.T. ; Trevisoli, R.D. ; de Souza, M. ; Pavanello, Marcelo Antonio
Author_Institution
Dept. of Electr. Eng., Centro Univ. da FEI, São Bernardo do Campo, Brazil
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
This paper aims to analyze the charges density in multiple gates junctionless devices with different dimensions.. The analysis of the charge densities was done at the center of the silicon film, at the sidewall and at the top interfaces between the silicon and the gate oxide, for devices with different fin width, height and gate oxide tickness. Based on this analisys, the occurrence of corner effects in Junctionless devices is investigated.
Keywords
MOS integrated circuits; silicon-on-insulator; SOI; gate oxide tickness; multiple gates junctionless devices; nMOS junctionless; sidewall; silicon film; Junctionless transistor; charge density; corner effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location
Curitiba
Print_ISBN
978-1-4799-0516-4
Type
conf
DOI
10.1109/SBMicro.2013.6676177
Filename
6676177
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