DocumentCode
650149
Title
Atomistic magnetoconductance effects in strained FETs
Author
Gutierrez-D, E.A. ; Pondigo de los A, E. ; Vega-G, V.H. ; Rodriguez-R, G. ; Uribe-V, H. ; Huerta-G, O. ; Molina-R, J.
Author_Institution
Dept. of Electron., INAOE, Puebla, Mexico
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
5
Abstract
We introduce experimental, modeling and simulation results of the electrical performance of 28nm FETs, operated under the action of an external magnetic field B. Negative resistance and magneto-current amplification are some of the effects discussed through this research compilation done within the Microelectronics research group of the National Institute for Astrophysics, Optics and Electronics.
Keywords
field effect transistors; integrated circuits; magnetic field effects; magnetoresistance; National Institute for Astrophysics, Optics and Electronics; atomistic magnetoconductance effects; external magnetic field; magnetocurrent amplification; microelectronics research group; negative resistance; size 28 nm; strained FET; FET; low-dimensional devices; magnetic; quantum;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location
Curitiba
Print_ISBN
978-1-4799-0516-4
Type
conf
DOI
10.1109/SBMicro.2013.6676181
Filename
6676181
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