Analysis of border traps in high-к gate dielectrics on high-mobility channels

Author

Simoen, Eddy ; Lin, Hsin-Chang ; Alian, A. ; Brammertz, Guy ; Merckling, C. ; Mitard, J. ; Claeys, Cor

Author_Institution

Imec, Leuven, Belgium

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

1

Lastpage

5

Abstract

This paper gives an overview of measurement techniques to assess border traps in high-k gate dielectrics deposited on high-mobility channel materials, like Ge and InGaAs. A short description of the measurement principle and bulk oxide trap analysis will be provided for three methods, namely, low-frequency (1/f) noise, Deep-Level Transient Spectroscopy and AC transconductance dispersion. Practical application is illustrated either on metal-oxide-semiconductor capacitors or transistors, depending on the technique.

Keywords

III-V semiconductors; MIS devices; deep level transient spectroscopy; gallium arsenide; germanium; indium compounds; AC transconductance dispersion; Ge; InGaAs; MOS devices; border traps; bulk oxide trap analysis; deep-level transient spectroscopy; high-k gate dielectrics; high-mobility channel materials; low-frequency noise; AC transconductance dispersion; Deep-Level Transient Spectroscopy; Low-frequency noise; border traps; bulk oxide traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2013 Symposium on

Conference_Location

Curitiba

Print_ISBN

978-1-4799-0516-4

Type

conf

DOI

10.1109/SBMicro.2013.6676184

Filename

6676184