DocumentCode
650153
Title
Potential and limitations of UTBB SOI for advanced CMOS technologies
Author
Claeys, Cor ; Aoulaiche, Marc ; Simoen, Eddy ; Nicoletti, T. ; Dos Santos, Sara D. ; Martino, Joao Antonio
Author_Institution
Imec, Leuven, Belgium
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
6
Abstract
UTBB (ultra-thin body and ultra-thin buried oxide) technologies are highly competitive for scaled technologies down to the 14 nm range. This paper reviews their potential for digital, analog and memory applications. Attention is also given to low frequency noise and radiation hardness aspects.
Keywords
CMOS integrated circuits; radiation hardening (electronics); silicon-on-insulator; CMOS technology; UTBB SOI; frequency noise; radiation hardness; scaled technology; ultra-thin body technology; ultra-thin buried oxide technology; 1T-FBRAM retention time; UTBB SOI; analog applications; low-frequency noise; radiation hardness;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Technology and Devices (SBMicro), 2013 Symposium on
Conference_Location
Curitiba
Print_ISBN
978-1-4799-0516-4
Type
conf
DOI
10.1109/SBMicro.2013.6676185
Filename
6676185
Link To Document