DocumentCode :
6511
Title :
Growth Parameters of Fully Crystallized YIG, Bi:YIG, and Ce:YIG Films With High Faraday Rotations
Author :
Block, A.D. ; Dulal, P. ; Stadler, B.J.H. ; Seaton, Nicholas C. A.
Author_Institution :
Dept. of Electr. Eng., Univ. of Minnesota, Minneapolis, MN, USA
Volume :
6
Issue :
1
fYear :
2014
fDate :
Feb. 2014
Firstpage :
1
Lastpage :
8
Abstract :
We report on the growth of thin films of yttrium iron garnet (YIG) on dielectric substrates. Such films have historically been challenging to grow due to either cracking or incomplete crystallization of the films. We have established the proper growth parameters by tuning seed layer thickness to an optimum of 45 nm. These films were then used as seed layers for growth of films of Bi:YIG and Ce:YIG. Bi:YIG films show a Faraday rotation of 1700 °/cm, and Ce:YIG films show a Faraday rotation of 3700 °/cm.
Keywords :
Faraday effect; bismuth; cerium; crystallisation; sputter deposition; thin films; yttrium compounds; Faraday rotations; YIG; YIG:Bi; YIG:Ce; dielectric substrates; fully crystallized thin film growth; growth parameters; seed layer thickness; size 45 nm; yttrium iron garnet; Annealing; Crystallization; Faraday effect; Films; Garnets; X-ray scattering; Faraday effect; Garnet; magneto-optics;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2013.2293610
Filename :
6678201
Link To Document :
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