Title :
Low-distortion super-GOhm subthreshold-MOS resistors for CMOS neural amplifiers
Author :
Kassiri, Hossein ; Abdelhalim, Karim ; Genov, Roman
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
fDate :
Oct. 31 2013-Nov. 2 2013
Abstract :
A low-distortion super-GOhm subthreshold MOS resistor is designed, fabricated and experimentally validated. The circuit is utilized as a feedback element in the body of a two-stage neural recording amplifier. Linearity is experimentally validated for 0.5 Hz to 5 kHz input frequency and over 0.3 to 0.9 V output voltage dynamic range. The implemented pseudo resistor is also tunable, making the high-pass filter pole adjustable. The circuit is fabricated in 0.13-μm CMOS process and consumes 96 nW from a 1.2 V supply to realize an over 500 GΩ resistance.
Keywords :
CMOS integrated circuits; amplifiers; bioelectric phenomena; biomedical engineering; neurophysiology; resistors; CMOS neural amplifiers; feedback element; frequency 0.5 kHz to 5 kHz; high pass filter pole; implemented pseudo resistor; linearity; low distortion resistors; subthreshold-MOS resistors; super-GOhm resistors; two stage neural recording amplifier; voltage 0.3 V to 0.9 V; voltage 1.2 V; Dynamic range; Electrodes; Immune system; Linearity; Noise; Resistance; Resistors;
Conference_Titel :
Biomedical Circuits and Systems Conference (BioCAS), 2013 IEEE
Conference_Location :
Rotterdam
DOI :
10.1109/BioCAS.2013.6679691
