DocumentCode :
65192
Title :
Failure Analysis Techniques for Microsystems-Enabled Photovoltaics
Author :
Yang, Benjamin B. ; Cruz-Campa, Jose Luis ; Haase, Gaddi S. ; Cole, Edward I. ; Tangyunyong, Paiboon ; Resnick, P.J. ; Kilgo, Alice C. ; Okandan, Murat ; Nielson, Gregory N.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
4
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
470
Lastpage :
476
Abstract :
Microsystems-enabled photovoltaics (MEPV) has great potential to meet the increasing demands for light-weight, photovoltaic solutions with high power density and efficiency. This paper describes effective failure analysis techniques to localize and characterize nonfunctional or underperforming MEPV cells. The defect localization methods such as electroluminescence under forward and reverse bias, as well as optical beam induced current using wavelengths above and below the device band gap, are presented. The current results also show that the MEPV has good resilience against degradation caused by reverse bias stresses.
Keywords :
OBIC; electroluminescence; failure analysis; micromechanical devices; solar cells; stress effects; defect localization; device band gap; electroluminescence; failure analysis; forward bias; microsystems-enabled photovoltaics; optical beam induced current; reverse bias; Electrodes; Failure analysis; Metals; Photovoltaic systems; Silicon; Stress; Failure analysis; photovoltaic (PV) cells; silicon; solar energy;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2284864
Filename :
6646197
Link To Document :
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