An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Author

Hsiao-Hsuan Hsu ; Chun-Yen Chang ; Chun-Hu Cheng ; Shan-Haw Chiou ; Chiung-Hui Huang ; Yu-Chien Chiu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

13

Issue

5

fYear

2014

fDate

Sept. 2014

Firstpage

933

Lastpage

938

Abstract

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm²/Vs) at a drive voltage of <;3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

Keywords

gallium compounds; getters; indium compounds; ternary semiconductors; thin film transistors; zinc compounds; InGaZnO; capping layer; device mobility; drive voltage; field effect mobility; gettering effect; metal-oxide thin film transistor; oxygen gettering scheme; subthreshold swing; Dielectrics; Gettering; Iron; Logic gates; Performance evaluation; Thin film transistors; Zinc; Gettering; InGaZnO (IGZO); thin-film transistor (TFT); titanium oxide (TiOx);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2014.2332395

Filename

6841632