DocumentCode :
653628
Title :
GaN-based multiple quantum well light-emitting-diodes employing nanotechnology for photon management
Author :
Yu-Hsuan Hsiao ; Meng-Lin Tsai ; Jr-Hau He
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2013
fDate :
6-11 Oct. 2013
Firstpage :
1
Lastpage :
7
Abstract :
Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanofabrication; nanostructured materials; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN-based multiple quantum well; LEDs; fabrication techniques; light extraction enhancement; light-emitting-diodes; nanostructures; nanotechnology; photon management; radiation pattern control; strain relaxation; white light devices; Epitaxial growth; Fabrication; Gallium nitride; Light emitting diodes; Photonics; Quantum well devices; GaN; Light emitting diode; multiple quantum well; nanostructure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Society Annual Meeting, 2013 IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
0197-2618
Type :
conf
DOI :
10.1109/IAS.2013.6682537
Filename :
6682537
Link To Document :
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