Towards high-power SW DRM transmitter in solid-state technology

With the latest technology advancements in RF power transistors, it is now possible for commercially available RF power MOSFET transistors to be used for switching purposes at shortwave frequencies. This paper reviews the current progress in design of solid-state shortwave power amplifier module and gives a sight on possible solid-state shortwave transmitter architecture. We propose a power adding network and an output matching network for effective power combing and matching that would lead to a fully solid-state shortwave transmitter design. The final goal would be replacing the electron tube output stage (still used for signal amplification at shortwave frequencies) with fully transistorized circuit.