Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

Author

Zebrev, Gennady I. ; Vatuev, Alexander S. ; Useinov, Rustem G. ; Emeliyanov, Vladimir V. ; Anashin, Vasily S. ; Gorbunov, Maxim S. ; Turin, Valentin O. ; Yesenkov, Kirill A.

Author_Institution

Dept. of Micro- & Nanoelectron., Nat. Res. Nucl. Univ. MEPHI, Moscow, Russia

Volume

61

Issue

4

fYear

2014

fDate

Aug. 2014

Firstpage

1531

Lastpage

1536

Abstract

We study experimentally and theoretically the micro-dose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We found experimentally that cumulative increase of leakage current occurs by means of stochastic spikes corresponding to a strike of single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs was proposed.

Keywords

Monte Carlo methods; power MOSFET; probability; radiation hardening (electronics); semiconductor device models; MOSFET gate oxide; Monte Carlo method; analytic model; cumulative dose aspect; deterministic aspect; high-LET heavy ions; microdose-induced drain-source leakage current; power trench MOSFET; single-event aspect; single-heavy ion strike; stochastic aspect; stochastic spikes; survival probability assessment; Ions; Leakage currents; Logic gates; MOSFET; Monte Carlo methods; Radiation effects; Heavy ions; LET; Monte Carlo; microdose effects; parametric failures; parasitic transistor; single-event effects; source-drain leakage; total dose effects; trench power MOSFETs;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2315852

Filename

6841642