${\\rm MoS}_{2}$ Field-Effect Transistors With Graphene/Metal Heterocontacts

Author

Yuchen Du ; Lingming Yang ; Jingyun Zhang ; Han Liu ; Majumdar, Kausik ; Kirsch, Paul D. ; Ye, Peide D.

Author_Institution

Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

599

Lastpage

601

Abstract

For the first time, n-type few-layer MoS₂ field-effect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in ON-resistance and a 3.3 times improvement in contact resistance with heterocontacts compared with the MoS₂ FETs without graphene contact layer. Temperature-dependent study on MoS₂/graphene heterocontacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS₂/graphene/metal heterocontacts structure.

Keywords

Schottky barriers; contact resistance; field effect transistors; graphene; molybdenum compounds; titanium; FET; MoS₂; ON-OFF current ratio; ON-resistance; Schottky barrier height; Schottky contact nature; Ti; contact resistance; devised I-V method; electrical characteristic enhancement; graphene-metal heterocontacts structure; n-type few-layer field-effect transistors; size 1 mum; temperature-dependent study; transfer length method; Contact resistance; Field effect transistors; Graphene; Metals; Schottky barriers; Temperature measurement; ${rm MoS}_{2}$; MOSFET; MoS₂; Schottky barrier height; Schottky barrier height.; graphene; heterocontacts;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2313340

Filename

6783768