High efficiency Ka-band Gallium Nitride power amplifier MMICs

Author

Campbell, Charles F. ; Yueying Liu ; Ming-Yih Kao ; Nayak, Shriguru

Author_Institution

Infrastruct. & Defense Products, TriQuint, Richardson, TX, USA

fYear

2013

fDate

21-23 Oct. 2013

Firstpage

1

Lastpage

5

Abstract

The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15μm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage balanced amplifier demonstrates up to 11W of output power and 30% power added efficiency (PAE) at 30GHz. The 3-stage single-ended design produced over 6W of output power and up to 34% PAE. The die size for the balanced and single-ended MMICs are 3.24×3.60mm² and 1.74×3.24mm² respectively.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium compounds; millimetre wave power amplifiers; wide band gap semiconductors; 3-stage balanced amplifier; GaN; HEMT process technology; frequency 30 GHz; power 11 W; power 6 W; power amplifier MMIC; size 0.15 mum; Field effect transistors; Gain; Gallium nitride; MMICs; Power amplifiers; Power generation; Power measurement; Gallium Nitride; MMIC; millimeter wave; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on

Conference_Location

Tel Aviv

Type

conf

DOI

10.1109/COMCAS.2013.6685246

Filename

6685246