Title :
A class-F−1 GaN HEMT power amplifier optimized for envelope tracking with gain-efficiency trajectory analysis and comparison
Author_Institution :
Nokia, Beijing, China
Abstract :
In this paper, a high voltage class-F-1 GaN HEMT power amplifier (PA) was developed and optimized for envelope tracking (ET) over 920MHz to 960MHz. The design was facilitated by micro strip harmonic tuning. The PA achieved a high efficiency greater than 70% across the band by delivering over 25W average power. It was optimized for envelope tracking (ET), compared with class-A/AB power amplifiers based on 28V GaN HEMT and GaAs HV-HBT gain-efficiency trajectories, this work obtained superior ET system efficiency of back-off and pre-distortion linearization capability respectively with proposed three metrics for ET PA selection.
Keywords :
HEMT integrated circuits; III-V semiconductors; UHF integrated circuits; UHF power amplifiers; circuit tuning; distortion; gallium compounds; linearisation techniques; wide band gap semiconductors; GaAs; GaN; HEMT power amplifier; HV-HBT gain-efficiency trajectories; class-F-1 HEMT power amplifier; envelope tracking; frequency 920 MHz to 960 MHz; gain-efficiency trajectory analysis; microstrip harmonic tuning; power 25 W; predistortion linearization capability; voltage 28 V; Gallium arsenide; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Power amplifiers; Trajectory; Class-F−1; GaN; efficiency; envelope tracking; power amplifier;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on
Conference_Location :
Tel Aviv
DOI :
10.1109/COMCAS.2013.6685250
