Title :
Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication
Author :
Schlechtweg, Michael ; Tessmann, A. ; Leuther, A. ; Massler, Hermann ; Wagner, Steffen ; Aidam, R. ; Rosenzweig, J. ; Ambacher, Oliver ; Kallfass, I. ; Lewark, U.J. ; Sommer, Rainer ; Wahlen, Alfred ; Stanko, Stephan ; Ender, Joachim
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. IAF, Freiburg, Germany
Abstract :
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter- and submillimeter-wave monolithic integrated circuits (MMICs and S-MMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4” GaAs substrates. This paper presents a 600 GHz amplifier S-MMIC and a chip set of MMICs developed for a 300 GHz radar.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave radar; submillimetre wave amplifiers; Fraunhofer IAF; GaAs; InGaAs-InAlAs; amplifier S-MMIC; frequency 300 GHz; frequency 600 GHz; mHEMT technology; metamorphic high electron mobility transistor; millimeter-wave MMIC; radar; size 4 in; submillimeter-wave monolithic integrated circuits; Indium phosphide; Logic gates; MMICs; MODFETs; Radar; mHEMTs; metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); mixer; multiplier; radar; submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier;
Conference_Titel :
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on
Conference_Location :
Tel Aviv
DOI :
10.1109/COMCAS.2013.6685251
