Performance comparison for millimeter-wave single-pole double throw switches

Author

Dyskin, Aleksey ; Wagner, Steffen ; Ritter, Daniel ; Kallfass, I.

Author_Institution

Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel

fYear

2013

fDate

21-23 Oct. 2013

Firstpage

1

Lastpage

5

Abstract

In this paper we present the performance comparison of different single-pole double throw (SPDT) switch topologies realized in metamorphic high electron mobility transistor (mHEMT) technology. Conventional series-series and shunt-shunt topology switches designed for 60 GHz and 94 GHz are compared to the asymmetrical topology switch designed for broadband performance from 60 to 90 GHz. Parameters like insertion loss, isolation, power matching and linearity are considered in this paper.

Keywords

high electron mobility transistors; microwave switches; millimetre wave devices; SPDT switch; asymmetrical topology switch; frequency 60 GHz to 90 GHz; frequency 94 GHz; mHEMT technology; metamorphic high electron mobility transistor; millimeter-wave switches; series-series topology switches; shunt-shunt topology switches; single-pole double throw switches; Capacitance; HEMTs; Insertion loss; Linearity; Logic gates; Topology; Asymmetrical topology; Broadband performance; Performance comparison; SPDT; Series topology; Shunt topology; W-Band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on

Conference_Location

Tel Aviv

Type

conf

DOI

10.1109/COMCAS.2013.6685252

Filename

6685252