TSV multi-signal connection compact modeling

Author

Mina, Essam ; Shlafman, Shlomo ; Gordin, Rachel ; Sheinman, B. ; Elad, Danny

Author_Institution

IBM Burlington, Burlington, VT, USA

fYear

2013

fDate

21-23 Oct. 2013

Firstpage

1

Lastpage

5

Abstract

This paper presents wideband circuit level compact models of through-silicon via (TSV) multi-signal connections within an array. The models were developed for time and frequency domain characterization of periodic TSV array patterns, including crosstalk evaluation. A frequency dependent silicon substrate induced dispersion and loss effects are considered, as well as the skin and proximity effects. The models were verified by EM simulations up to 30 GHz.

Keywords

crosstalk; frequency-domain analysis; three-dimensional integrated circuits; time-domain analysis; EM simulations; Si; TSV multisignal connection; compact modeling; crosstalk evaluation; dispersion effect; frequency domain characterization; loss effect; periodic TSV array patterns; proximity effect; silicon substrate; skin effect; through-silicon via; time domain characterization; wideband circuit level compact models; Arrays; Inductance; Integrated circuit modeling; Scattering parameters; Silicon; Substrates; Through-silicon vias; compact models; crosstalk; multi-signal connection; three-dimensional integration (3DI); through-silicon via (TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on

Conference_Location

Tel Aviv

Type

conf

DOI

10.1109/COMCAS.2013.6685260

Filename

6685260