AlGaN/GaN HEMT development targeted for X-band applications

Author

Wohlmuth, W. ; Ming-Hung Weng ; Che-Kai Lin ; Jhih-Han Du ; Shin-Yi Ho ; Tung-Yao Chou ; Shuan-Ming Li ; Huang, Chao ; Wei-Chou Wang ; Wen-kai Wang

Author_Institution

WIN Semicond. Corp., Tao Yuan Shien, Taiwan

fYear

2013

fDate

21-23 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

This paper discusses a newly developed 0.25μm GaN on SiC foundry process technology to support discrete and MMIC applications extending from L-through X-band. The GaN HEMT technology is based on high-throughput and low-cost i-line photolithographic tools and on large-diameter 100mm SiC substrates. The technology supports applications utilizing supply voltages up to 28V with power density of 4W/mm, PAE of 45%, and large signal linear gain of 15dB at 10GHz based on on-wafer measurements without harmonic terminations.

Keywords

III-V semiconductors; MMIC; aluminium compounds; gallium compounds; high electron mobility transistors; photolithography; wide band gap semiconductors; AlGaN-GaN; GaN HEMT technology; GaN foundry process technology; L-through X-band; MMIC applications; SiC; SiC foundry process technology; SiC substrates; X-band applications; discrete applications; efficiency 45 percent; frequency 10 GHz; gain 15 dB; on-wafer measurements; photolithographic tools; size 0.25 mum; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; Logic gates; Radio frequency; AlGaN/GaN; Foundry; HEMT; T-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on

Conference_Location

Tel Aviv

Type

conf

DOI

10.1109/COMCAS.2013.6685272

Filename

6685272