A High Modulation Bandwidth, 110 GHz Power-DAC Cell for IQ Transmitter Arrays With Direct Amplitude and Phase Modulation

Author

Balteanu, A. ; Shopov, S. ; Voinigescu, S.P.

Author_Institution

ECE Dept., Univ. of Toronto, Toronto, ON, Canada

Volume

49

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

2103

Lastpage

2113

Abstract

This paper studies the maximum Baud rate and the scalability to the W-Band of the mm-wave power-DAC transmitter architecture. Proof-of-concept implementations of a single DAC lane and of a 2×2 IQ transmitter array are reported in 45 nm SOI CMOS. The DAC cell achieved 29 GHz OOK and 29 GHz BPSK modulation bandwidth and 2×44 Gb/s BPSK+OOK data rates for carriers in the 100-110 GHz range. The corresponding energy efficiency is 7.5 pJ/bit at an output power of 12 dBm. For the 2×2 IQ array, an EVM of 9.0% is estimated over a 12 GHz bandwidth, from large signal power and S-parameter phase measurements.

Keywords

CMOS integrated circuits; S-parameters; amplitude shift keying; millimetre wave antenna arrays; modulators; phase shift keying; silicon-on-insulator; transmitting antennas; BPSK modulation; IQ transmitter arrays; OOK modulation; S-parameter phase measurements; SOI CMOS; bit rate 44 Gbit/s; direct amplitude modulation; frequency 100 GHz to 110 GHz; frequency 29 GHz; millimeter wave antenna arrays; phase modulation; power-DAC cell; size 45 nm; Binary phase shift keying; CMOS integrated circuits; Gain; Logic gates; Transistors; Transmitters; BPSK modulator; IQ array; OOK modulator; QAM modulator; SOI CMOS; W band; mm-wave; mm-wave DAC; power amplifier; power-DAC; power-added efficiency; quadrature mm-wave modulator;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2014.2327216

Filename

6841648