Design of a Mesfet based Low Noise Amplifier with Improved Noise Figure for Low Power Wireless Applications in 2-3 GHz

Author

Prameela, B. ; Jagadeesh, Kumar P.

Author_Institution

Dept. of Electron. Eng., AdiShankara Inst. of Eng. & Technol., India

fYear

2013

fDate

29-31 Aug. 2013

Firstpage

257

Lastpage

260

Abstract

A Low Noise Amplifier (LNA) based on NEC 0.3μm GaAs MESFET technology has been designed with a modified cascode configuration which makes use of two common source transistors. In the 2-3GHz range, the designed LNA has a noise figure less than 0.65dB, maximum intrinsic gain of 18.4dB, P1dB of 2dBm, IIP3 of -1.6dBm and 20mW power consumption at a supply voltage of 3V. The dynamic range of the designed LNA is 60.6dB. The characteristic impedance is chosen as 50O. The custom layout of the proposed LNA has been designed.

Keywords

3G mobile communication; 4G mobile communication; III-V semiconductors; Schottky gate field effect transistors; UHF amplifiers; gallium arsenide; low noise amplifiers; microwave amplifiers; LNA; NEC GaAs MESFET technology; common source transistors; frequency 2 GHz to 3 GHz; low noise amplifier; low power wireless applications; modified cascode configuration; noise figure; power 20 mW; resistance 50 ohm; size 0.3 mum; voltage 3 V; Gain; Impedance matching; Low-noise amplifiers; MESFETs; Noise; Noise figure; 1 dB compression point; IIP3; Intermodulation; Intrinsic gai; Noise figure; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Computing and Communications (ICACC), 2013 Third International Conference on

Conference_Location

Cochin

Type

conf

DOI

10.1109/ICACC.2013.112

Filename

6686383