DocumentCode
655567
Title
Planar MOSFET devices on paper substrate using graphene oxide film as gate dielectric
Author
Valentini, L. ; Kenny, J.M. ; Alimenti, F. ; Roselli, Luca
Author_Institution
Dept. of Civil & Environ. Eng., Univ. of Perugia, Terni, Italy
fYear
2013
fDate
6-10 Oct. 2013
Firstpage
5
Lastpage
8
Abstract
This paper deals with a novel MOSFET device on paper substrate. Such transistor uses poly(3-hexylthiophene) (P3HT) as p-type,organic semiconductor as channel and a film of graphene oxide (GO) as the gate dielectric material. The P3HT and the GO were used as inks in chloroform and aqueous solutions, respectively. Planar top gate and bottom gate MOSFET devices were fabricated. Preliminary results show a quadratic behavior of the drain current Id as a function of the gate-to-source voltage (Vgs).
Keywords
MOSFET; dielectric materials; graphene; organic semiconductors; GO; P3HT; gate dielectric material; graphene oxide film; organic semiconductor; p-type semiconductor; paper substrate; planar MOSFET devices; poly(3-hexylthiophene); transistor; Dielectrics; Films; Graphene; Logic gates; Substrates; Transistors; RFID; circuits on cellulose; flexible electronics; graphene oxide; organic MOSFET devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2013 European
Conference_Location
Nuremberg
Type
conf
Filename
6686576
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