Integrated Passive Device process for high quality factor passive components and modules

Author

Vaha-Heikkila, T. ; Saijets, Jan ; Holmberg, Jan ; Rantakari, Pekka ; Ronkainen, H. ; Tuovinen, Reijo

Author_Institution

VTT Tech. Res. Centre of Finland, Espoo, Finland

fYear

2013

fDate

6-10 Oct. 2013

Firstpage

100

Lastpage

103

Abstract

An Integrated Passive Device (IPD) technology has been developed for high quality factor (Q) passive components for radio frequency (RF) applications. This paper presents the technology, its key building blocks such as inductors, capacitors and transmission lines as well as a diplexer designed for long term evolution (LTE) handset applications. Measured results are presented for an LC-resonator (Q of 140 at 4.2 GHz) to verify the performance of the key elements. Also, a 1.1 mm × 1.7 mm IPD diplexer on high resistivity silicon show measured loss less than 0.5 dB in the mobile phone bands both below 1 GHz and above 1.7 GHz.

Keywords

LC circuits; Long Term Evolution; capacitors; elemental semiconductors; inductors; microwave circuits; microwave resonators; mobile handsets; modules; passive networks; silicon; IPD technology; LC-resonator; LTE handset application; Long Term Evolution handset application; RF application; Si; capacitor; diplexer; frequency 4.2 GHz; high quality factor passive component; inductor; integrated passive device process; mobile phone band; module; radiofrequency application; transmission line; Capacitors; Inductors; Metals; Q-factor; Radio frequency; Silicon; Transmission line measurements; IPD; MIM-capacitor; diplexer; inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6686600