• DocumentCode
    655630
  • Title

    Evaluation of HBT device linearity using advanced measurement techniques

  • Author

    Buisman, Koen ; de Vreede, Leo C. N. ; Marchetti, Mirco ; van der Heijden, Mark P. ; Zampardi, P.J.

  • Author_Institution
    Electron. Res. Lab., Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2013
  • fDate
    6-10 Oct. 2013
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    With this work we address the linearity of HBT devices when operated at their optimum bias and matching conditions at baseband, fundamental and second harmonic. Using active harmonic load pull and pulsed I-V / s-parameter device characterization, the intrinsic linearity properties of SiGe and III-V based HBT devices are evaluated and compared. From this exercise the bias dependent Cbc behavior is identified as key differentiator for the linearity of the different technologies.
  • Keywords
    Ge-Si alloys; III-V semiconductors; S-parameters; heterojunction bipolar transistors; semiconductor device measurement; HBT device linearity; III-V based HBT devices; S-parameter device characterization; SiGe; active harmonic load pull; advanced measurement techniques; baseband; linearity properties; matching conditions; optimum bias conditions; pulsed I-V; second harmonic; Baseband; Harmonic analysis; Heterojunction bipolar transistors; Linearity; Optimization; Performance evaluation; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2013 European
  • Conference_Location
    Nuremberg
  • Type

    conf

  • Filename
    6686640
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=655630