DocumentCode :
655914
Title :
Load-modulated GaN power amplifier implementing tunable thick film BST components
Author :
Arnous, Mhd Tareq ; Wiens, Andrew ; Preis, Sebastian ; Maune, Holger ; Bathich, Khaled ; Nikfalazar, Mohammad ; Jakoby, Rolf ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
fYear :
2013
fDate :
6-10 Oct. 2013
Firstpage :
1387
Lastpage :
1390
Abstract :
In this work, a novel adaptive broadband power amplifier (PA) design based on barium-strontium-titanate (BST) components for dynamic load modulation (DLM) is presented. The designed PA, driven in class C, makes use of a commercial GaN HEMT, and is intended to operate over 1.8-2.2 GHz with maximum output power of 43 dBm together with high efficiency at maximum output power level. At back-off output power operation, the tunable BST-based output matching network introduces the optimum load impedance for high efficiency. The frequency and input power dependent impedance tunability is realized using a π-structure matching topology based on thick film BST varactors which have a very high breakdown voltage of higher than 500 V.
Keywords :
III-V semiconductors; UHF power amplifiers; barium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; strontium compounds; varactors; wide band gap semiconductors; π-structure matching topology; BaSrTiO3; GaN; adaptive broadband power amplifier design; back-off output power operation; barium-strontium-titanate components; breakdown voltage; class C power amplifier; commercial GaN HEMT; dynamic load modulation; frequency 1.8 GHz to 2.2 GHz; impedance tunability; load-modulated GaN power amplifier; optimum load impedance; output matching network; tunable thick film BST components; varactors; Broadband communication; Impedance; Power amplifiers; Power generation; Power measurement; Transistors; Voltage measurement; Adaptive matching; BST; GaN HEMT; broadband; dynamic load; efficiency enhancement; ferroelectrics; load modulation; power amplifer; tunable component;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2013 European
Conference_Location :
Nuremberg
Type :
conf
Filename :
6686925
Link To Document :
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