A 0-level packaged RF-MEMS switched wideband GaAs LNA MMIC

Author

Gustafsson, A. ; Samuelsson, C. ; Malmqvist, R. ; Seok, Sangok ; Fryziel, M. ; Rolland, Nathalie ; Grandchamp, B. ; Vaha-Heikkila, T. ; Baggen, R.

Author_Institution

Swedish Defence Res. Agency (FOI), Linkoping, Sweden

fYear

2013

fDate

6-10 Oct. 2013

Firstpage

1403

Lastpage

1406

Abstract

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors´ knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP₃≤24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz).

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; low noise amplifiers; millimetre wave amplifiers; wafer level packaging; wideband amplifiers; 0-level packaged GaAs MEMS LNA circuit; 0-level packaged MEMS switched wideband LNA MMIC; BCB cap type; GaAs; GaAs MMIC process; RF-MEMS Dicke switched wideband LNA; frequency 16 GHz to 34 GHz; frequency 5 GHz to 40 GHz; gain -6 dB; gain 10 dB to 17 dB; wafer-level package; Gallium arsenide; MMICs; Micromechanical devices; Microswitches; Noise measurement; Wideband; 0-level package; Low noise amplifiers; MMIC; packaging; radio frequency micro-electromechanical systems; switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6686929