High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies

Author

Cheron, Jerome ; Campovecchio, M. ; Quere, R. ; Schwantuschke, Dirk ; Quay, Ruediger ; Ambacher, Oliver

Author_Institution

XLIM, Univ. de Limoges, Limoges, France

fYear

2013

fDate

6-10 Oct. 2013

Firstpage

1463

Lastpage

1466

Abstract

Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realized using AlGaN/GaN HEMTs with a gate length of 100 nm. Two single-stage amplifiers are presented to highlight the potential of this GaN technology. A dual-stage amplifier is designed to reach high power performances. In continuous-wave (CW) operation, MMICs have provided up to 1.4 W, 2.4 W and 4.7 W of output power associated with (in this order) 41%, 33%, and 28% of PAE, respectively. The dual-stage MMIC delivered an output power higher than 4 W, associated with 27% of PAE and 9.8 dB of power gain from 29 GHz to 31 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; millimetre wave power amplifiers; wide band gap semiconductors; AlGaN-GaN; CW; HEMT; Ka-band frequency; continuous-wave operation; dual-stage amplifier; efficiency 27 percent; efficiency 28 percent; efficiency 33 percent; efficiency 41 percent; frequency 29 GHz to 31 GHz; gain 9.8 dB; high-efficiency power amplifier MMICs; single-stage amplifiers; size 100 nm; Gain; Gallium nitride; HEMTs; MMICs; MODFETs; Power amplifiers; Power generation; Gallium Nitride; MMIC; high efficiency; millimeter-wave; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6686944