• DocumentCode
    655944
  • Title

    A 159–169 GHz frequency source with 1.26 mW peak output power in 65 nm CMOS

  • Author

    Khamaisi, Bassam ; Socher, Eran

  • Author_Institution
    School of Electrical Engineering, Tel-Aviv University, Israel
  • fYear
    2013
  • fDate
    6-10 Oct. 2013
  • Firstpage
    1507
  • Lastpage
    1510
  • Abstract
    This paper present a D-band signal source based on a 2nd harmonic generation of a differential Colpitts VCO that fabricated on 65 nm CMOS process. It covers a frequency range from 159 GHz to 169 GHz with a total tuning range of 5.8%. It provides −3.8 dBm at 163.5 GHz with a nominal supply voltage of 1.2 V while consuming a DC current of 25 mA and with power efficiency of 1.38%; increasing the supply voltage to 2 V with consuming a DC current of 44 mA achieves +1 dBm at 164.6 GHz with efficiency of 1.43%. The source performance in terms of output power, tuning range and efficiency is the best that reported on CMOS at this frequency range.
  • Keywords
    CMOS; Colpitts topology; D-Band; Millimeter waves; Voltage Controlled Oscillator (VCO);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2013 European
  • Conference_Location
    Nuremberg, Germany
  • Type

    conf

  • Filename
    6686955