Spectroscopic characterization of a 2.3µm GaInAsSb-based VCSEL structure

Author

Chai, G.M.T. ; Hosea, T.J.C.

Author_Institution

Ibnu Sina Inst. for Fundamental Sci. Studies, Univ. Teknol. Malaysia, Johor Bahru, Malaysia

fYear

2013

fDate

28-30 Oct. 2013

Firstpage

66

Lastpage

68

Abstract

A vertical-cavity surface-emitting laser (VCSEL) structure, for 2.3μm gas sensing, is investigated with photo-modulated reflectance (PR) as functions of incidence angle and temperature. Heating from 9K to 300K tunes the quantum well (QW) transitions relative to the VCSEL cavity mode (CM). The QW ground-state comes into resonance with the CM at 220±2K and the QW-CM offset at 300K is 21meV. These results are compared with those of operating devices.

Keywords

III-V semiconductors; electro-optical effects; gallium arsenide; gallium compounds; gas sensors; ground states; indium compounds; infrared detectors; laser cavity resonators; quantum well lasers; reflectivity; remote sensing by laser beam; semiconductor quantum wells; surface emitting lasers; GaInAsSb; QW ground state; VCSEL cavity mode; VCSEL structure; electron volt energy 21 meV; gas sensing; heating; incidence angle; photomodulated reflectance; quantum well transitions; spectroscopic characterization; temperature 9 K to 300 K; temperature effects; vertical cavity surface emitting laser; wavelength 2.3 mum; Scholarships; Silicon; VCSEL; mid-infrared; photo-modulated reflectance; spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2013 IEEE 4th International Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4673-6073-9

Type

conf

DOI

10.1109/ICP.2013.6687069

Filename

6687069