Title :
Effect of GeCl4/SiCl4 flow ratio on Germanium incorporation in MCVD process
Author :
Mat-Sharif, K.A. ; Zulkifli, M.I. ; Muhamad-Yassin, S.Z. ; Tamchek, N. ; Aljamimi, S.M. ; Yusoff, A. ; Amin, Y.M. ; Shafiqah, S. A. Siti ; Abdul-Rashid, H.A.
Author_Institution :
R&D, Adv. Phys. Technol., Telekom Malaysia, Cyberjaya, Malaysia
Abstract :
Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica.
Keywords :
X-ray chemical analysis; chemical vapour deposition; doping; electron probe analysis; germanium compounds; scanning electron microscopy; silicon compounds; EPMA SEM-EDX; GeCl4-SiCl4; GeCl4-SiCl4 flow ratio effect; MCVD process; X-ray chemical analysis; electron microprobe analysis; germanium incorporation; mole fraction; scanning electron microscopy; silica codeposition; silica matrix; temperature 2100 degC; temperature deposition; thickness deposited layer; Germanium; EPMA; MCVD; chloride oxidation; germanium doped silica; silica preform; thermophoretic;
Conference_Titel :
Photonics (ICP), 2013 IEEE 4th International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4673-6073-9
DOI :
10.1109/ICP.2013.6687140
