DocumentCode
656293
Title
T-type 3-level IGBT power module using authentic reverse block-ing IGBT (RB-IGBT) for renewable energy applications
Author
Shuangching Chen ; Lu, David H. ; Wakimoto, Hiroki ; Nakazawa, H. ; Otsuki, Masatsugu
Author_Institution
Fuji Electr. Co. Ltd., Nagano, Japan
fYear
2013
fDate
3-6 Nov. 2013
Firstpage
229
Lastpage
234
Abstract
This paper describes the impacts on performance improvement in power conversion systems with newly developed T-type 3-level IGBT module, in which authentic Reverse Blocking IGBT (RB-IGBT) are implemented. The latest generation IGBT-FWD chipsets are installed as main switches and anti-paralleled RB-IGBTs work as AC-bidirectional switch. The simplest combination in semiconductor chipset makes it possible to pack more power into smaller package as well as reduction in power dissipation, which contributes the size reduction in power conversion systems. In this paper, 1200V-300A full T-leg 4in1 IGBT modules which promise wider application opportunity are introduced. As an application example, 1MW solar inverter of improved efficiency of as high as 98.5% will be discussed.
Keywords
insulated gate bipolar transistors; invertors; power semiconductor switches; AC-bidirectional switch; IGBT-FWD chipsets; RB-IGBT; T-type 3-level IGBT power module; authentic reverse block-ing IGBT; current 300 A; power 1 MW; power conversion systems; power dissipation reduction; renewable energy applications; semiconductor chipset; solar inverter; voltage 1200 V; Cooling; Electric breakdown; Insulated gate bipolar transistors; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Future Energy Electronics Conference (IFEEC), 2013 1st International
Conference_Location
Tainan
Print_ISBN
978-1-4799-0071-8
Type
conf
DOI
10.1109/IFEEC.2013.6687508
Filename
6687508
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